unisonic technologies co., ltd 2n7002dw power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r502-534.c 300m a , 60v dual n-channel power mosfet ? description the utc 2n7002dw uses advanced technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * high density cell design for low r ds(on) . * voltage controlled small signal switch * rugged and reliable * high saturation current capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 12345 6 2N7002DWL-AL6-R 2n7002dwg-al6-r sot-363 s1 g1 d2 s2 g2 d1 tape reel ? marking g: halogen free l: lead free 3p
2n7002dw power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-534.c ? absolute maximum ratings (t a =25c, unless otherwise noted.) parameter symbol ratings unit drain-source voltage v dss 60 v drain-gate voltage (r gs 1m ? ) v dgr 60 v gate source voltage continuous v gss 20 v non repetitive(t p <50 s) 40 drain current continuous i d 300 ma pulsed 800 power dissipation p d 200 mw derated above 25c 1.6 mw/c junction temperature t j + 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 625 (note1) c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 v drain-source leakage current i dss v ds =60v, v gs =0v 1 a gate-source leakage current i gssf v gs =20v, v ds =0v 100 na i gssr v gs =-20v, v ds =0v -100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d =250 a 1 2.1 2.5 v drain-source on-voltage v ds (on) v gs = 10v, i d =300ma 0.6 3.75 v v gs = 5.0v, i d =50ma 0.09 1.5 static drain-source on-resistance r ds (on) v gs =10v, i d =300ma,t j =125c 13.5 ? v gs =5.0v, i d =50ma 7.5 ? dynamic characteristics input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 20 50 pf output capacitance c oss 11 25 pf reverse transfer capacitance c rss 4 5 pf turn-on time t on v dd =30v, r l =150 ? i d =200ma, v gs =10v r gen =25 ? 20 ns turn-off time t off v dd =30v, r l =25 ? i d =200ma, v gs =10v r gen =25 ? 20 ns drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs =0v, is=300ma (note ) 0.88 1.5 v maximum pulsed drain-source diode forward current i sm 0.8 a maximum continuous drain-source diode forward current is 300 ma note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch. minimum land pad size. 2. pulse test: pulse width 300 s, duty cycle 2.0%
2n7002dw power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-534.c ? test circuit and waveform fig. 1 v gs r gen v dd v in r l v out dut g d s pulse width input, v in output, v out t on t off t d(off) t r t d(on) t f inverted 10% 10% 10% 50% 50% 90% 90% 90% fig. 2 switching waveforms
2n7002dw power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-534.c ? typical characteristics drain-source current, i d (a) normalized drain-source on-resistance, r ds (on) ( ? ) 100 75 0 - 25 2 1.5 1 - 50 0.5 1.6 1.2 0.8 0.4 v gs =10v 3 2.5 2 1.5 1 0 0.5 25 50 150 125 0.75 1. 25 1.75 2 0 t j =125c 25c normalized drain-source on- resistance, r ds(on) ( ? ) junction temperature, t j (c) on-resistance varisation with temperature v gs =10v i d =300ma normalized drain-source on- resistance, r ds (on) ( ? ) drain current,i d (a) on-resistance varisation with drain current and temperature 0 10 8 6 4 2 100 75 0 -25 -50 25 50 125 0.8 0.4 0.6 0.2 1.0 0 150 1.1 1.05 1 0.95 0.9 0.85 0.8 drain current, i d (a) gate to source voltage, v gs (v) transfer characteristics v ds =10v 25c 125c normalized gate-source threshold voltage, v gs(th) (v) junction temperature, t j (c) gate threshold varisation with temperature v gs = v ds i d = 1ma
2n7002dw power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-534.c ? typical characterics (cont.) 100 75 0 -25 1.1 1.05 1 -50 0.925 11.2 0.8 0.4 1 0.5 0.1 0.05 0.01 0. 2 0.005 25 50 150 125 0.95 1.025 1.075 1.4 0.001 0.975 0.6 2 normalized drain-source breakdown voltage, bv dss (v) junction temperature, t j (c) breakdown voltage varisation with temperature i d = 250 a body diode forward voltage, v sd (v) body diode forward voltage varisation with temperature reverse drain current, i s (a) v gs =0v t j =125c 25c capacitance (pf) gate-source voltage, v gs (v)
2n7002dw power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-534.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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